shunt capacitance信息详情
并联电容;寄生电容
rate capacitance───速率电容
motional capacitance───运动电容
parasitic capacitance───[电子]寄生电容
dialysis shunt───透析分流术
capacitance tolerance───[电]电容量允许偏差;电容公差
venous capacitance───[医]静脉容量
stint vs shunt───限制vs分流
Shunt capacitance may increase the settling time.───分流电容可增大稳定时间。
This is discussed in detail in the paragraphs on Shunt Capacitance Loading and Guarding.───这一点在“分流电容负载和保护”一节中详细讨论。
shown in Figure 2-35, the shunt capacitance (CSHUNT) must be charged to the test voltage by the current (IS).───如图2 - 35所示,并联电容(CSHUNT)必须由测试电流(IS)充电到测试电压。
Remaining shunt capacitance can be effectively neutralized by a slight modification of the feedback loop, as shown in Figure 1-12.───对反馈回路进行略微的修改就可以有效地消除残存的并联电容,如图1-12所示。
As shown in Figure 2-35, the shunt capacitance (CSHUNT) must be charged to the test voltage by the current (IS).───如图2-35所示,并联电容(CSHUNT)必须由测试电流(IS)充电到测试电压。
Figure 2-7 demonstrates the effects of shunt capacitance loading on the input of a typical high impedance voltmeter.───图2-7说明分流电容对典型的高输入阻抗电压表输入端的影响。
The effect of variations in the shunt capacitance, the series inductance, the bias voltage and the load resistance of tunnel diode oscillators on the oscillating waveforms is discussed in this paper.
While the primary advantage of guarding is a reduction in the effects of shunt resistance, another important aspect is the reduction in the effects of shunt capacitance.
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