phototransistor发音

意思翻译

n.[电子]光电晶体管

相似词语短语

双语使用场景

Such MSM structure can also be formed into a transverse phototransistor with its common-emitter current gain from 2 to '4.───这种结构还可以构成横向光晶体管，共发射极电流增益为2 ~ 4倍。

Optocoupler, Phototransistor Output, With Base Connection.───光耦，光电晶体管输出，基地连接。

The phototransistor was installed through holes in the top of the case, and enclosed in a brass tube that was painted black inside and out.───该光敏三极管是通过安装在洞上方的情况下，密封在一个黄铜管，这是手绘的黑色内。

The phototransistor and the light emitting diode are arranged on the end cover along a radical direction to form a measurement head.───光敏三极管与发光二极管沿径向安装于端盖上形成测量头。

Blank detail specification; optocoupler with phototransistor output, providing protection against electrical shock───空白详细规范能提供防电击保护的带有光电晶体管输出的光耦合器

Industry: Phototransistor; Variable Resistors; Other Resistors; Other transistor; Mica capacitor;───经营范围：贴片；电容；电阻；二三极管；；

Blank detail specification: Ambient rated photocouplers with phototransistor output───空白详细规范：带有光电晶体管输出的额定环境光电耦合器

Reseeach and Fabrication of Phototransistor for DNA Analysis───DNA检测用光电管的研制

英语使用场景

Phototransistor. Collector-emitter voltage 30 V. Emitter-collector voltage 6 V. Collector current 20 mA. Power dissipation 100 mW.

We find that the conventional phototransistor has a good responsivity but lower speed performance.

Note that both the l.e.d. and phototransistor are very directional - the tops are the sensitive surfaces.

The phototransistor was installed through holes in the top of the case, and enclosed in a brass tube that was painted black inside and out.

Optocoupler, Phototransistor Output, With Base Connection.

Phototransistor. Collector emitter voltage 30 V. Emitter collector voltage 5 V. Power dissipation 75 mW.

The phototransistor and the light emitting diode are arranged on the end cover along a radical direction to form a measurement head.

The conventional phototransistor and photodiode are discussed first.

The necessity of setting the bias current and segregation resistances in every element of bipolar silicon photo-negative resistance phototransistor array is studied and analysed.