plasma source发音

意思翻译

等离子源

相似词语短语

plasma───n.[等离子]等离子体；血浆；[矿物]深绿玉髓

source───n.(Source)人名；(法)苏尔斯；n.来源；水源；原始资料

plasma membrane───质膜；浆膜（等于cellmembrane）

donating plasma───捐献血浆

plasma cells───[医] 浆细胞；n.[组织][细胞]浆细胞；原生质细胞

cold plasma───[等离子]冷等离子体

plasma cell───n.[组织][细胞]浆细胞；原生质细胞

plasma proteins───血浆蛋白质

write source───写入源

双语使用场景

In this paper, a glow discharge plasma source ion implantation technique is described.───本文叙述了辉光放电等离子体源的等离子体源离子注入。

design method for space plasma source and measurement system is introduced in this paper.───文章介绍了空间等离子体源与测试系统的设计方法。

A new large area microwave plasma source has been developed.───研制了一种新的大面积微波等离子体源。

In plasma source ion implantation process, the sheath evolution has a very important influence on the surface modification of materials.───在这一技术中，等离子体鞘层的时空演化对材料表面改性有着非常重要的影响。

This method would be very helpful to the design of practical plasma source ion implantation processes.───这一分析方法对实际等离子体源离子注入应用具有重要的指导作用。

The lab-built plasma polishing setup consists of a vacuum chamber, a plasma source, a RF power supply and gas paths.───设计和安装了一套等离子体加工试验平台。加工试验平台由真空系统、等离子体源、射频电源系统、气路系统组成。

The silicon thin films on glass substrate were prepared using microwave ECR plasma source enhanced magnetron sputtering.───利用微波ECR等离子体增强磁控溅射沉积技术在玻璃表面制备了矽膜。

The results show that the ECR plasma source may generate stable, high density plasma with low electron temperature.───实验证明，ECR等离子体源能够稳定地产生电子温度较低的高密度等离子体。

It was studied that metallic material surface was modified by use of the new technique for ion injection with plasma source.───研究了一项实现金属材料表面改性，采用等离子体源离子注入的新技术。

英语使用场景

Its 300-mm Primo D-RIE system leverages a twin-station, mini-batch cluster architecture with a single-wafer environment and a VHF de-coupled RIE plasma source.

The hollow cathode will be presented as a plasma source for reactive evaporation processes.

It is justified first time by experiments that the magnetic filtering duct influences the cathode vacuum arc discharge by working as second anode of the MEVVA plasma source.

The plasma source ion implantation device consists of pulsed negative high voltage power, hot cathode arc discharge system, vacuum chamber and target stage, vacuum system and monitor system.

A microwave three probe system has been used to study the changes of annular waveguide plasma source impedance with operational parameters.