GAAS信息详情
n.（Gaas）（美）盖（人名）
substantively legal───实质上合法的
GA LINGA───林加
navigating the unknown───探索未知世界
gambit meaning───游戏意义
jesters waukegan───杰斯特·沃基根
corpora quadriga───四肢体
nea logan───没有日志
circumnavigate define───环绕导航定义
bidding for the olympic games───申办奥运会
interrogating a psychopath───审问精神病患者
To obtain high quality semi-insulating GaAs wafers, it is necessary to decrease microscopic defect density.───为了获得高质量半绝缘砷化镓单晶片，有必要降低微缺陷密度。
Ideal for use for correcting gain shift from temperature fluctuations of GaAs amplifiers.───理想用于纠正从中砷化镓放大器的使用温度波动变化。
modulation characteristics of GaAs-GaAlAs DH LBDs are analyzed and the results (data and curves) presented.───分析了器件的两种高频调制特性，给出了测量结果——数据和曲线。
GaAs FET Oscillator stabilized by a dielectric resonator with a feedback loop has been developed.───本文介绍了一种环路反馈式场效应管介质稳频振荡器。
when the feed rate is larger, line speed on the surface have little effect on the roughness of GaAs films. 2.───当进给速度较大时提高线速度对单晶砷化镓片的表面粗糙度影响不大。
The design of the broadband GaAs PHEMT monolithic true-time delay was described.───简要介绍了实时延迟线电路的基本概念，对电路设计流程进行了阐述。
In this paper , a small Hall current sensor made from a GaAs Hall component is introduced.───介绍了一种利用砷化镓霍尔元件设计的微型霍尔电流传感器。
With the progress of the CMOS process, the CMOS RF process can compare with the traditional RF process like Bipolar, GaAs and so on.───随着CMOS工艺的不断进步，CMOS射频工艺和传统的射频工艺如双极型工艺、GaAs工艺等有了可比性。
GaAs grown at low temperature, 24 the slowly recovering component observed in the ?───增长材料温度低、24日慢慢恢复组件中观测到的？。
An ultra low insertion loss GaAs MMIC RF SPDT switch based on full - ion - implantation technology is reported.
The design of C band GaAs MMIC low noise amplifier was described.
GaAs - Al _ xGa _ ( 1 - x ) As heterostructure grown by liquid phase epitaxy ( LPE ) has beenstudied by Auger electron spectroscope.
On the near surface monocrystalline GaAs layer, a better Schottky contact with a barrier height of 0.7V has also been fabricated.
The principle of GaAs photoemission polarized electrons and a very simple kind of GaAs polarized electron source are introduced in this paper.
Our GAAS all like this program very much. And we took this program tape back our Africa and show often.
The feedback circuit employs a GaAs photoconductive switch, which has simple structure and reliable performance.
Pt - GaAs Schottky barrier APDs have been investigated.
As a sub-nanosecond and pulse radiation detector, GaAs photoconductor detector has a very wide application foreground.