p type信息详情
p型
type───vi.打字;vt.打字;测定(血等)类型;n.类型,品种;模范;样式;n.(Type)人名;(英)泰普
p p───abbr.过去分词(pastparticiple)
p for p───p对p
type in───打入,输入;在已打好的材料上加入; 输入(在网上)
script type───脚本类型
jesting type───玩笑式
Batt Type───电池类型
p p s───abbr.聚苯硫(polyphenylenesulfite);每秒脉冲数(pulsespersecond);(拉)再附言(postpostscriptum);一种网络在线电视软件(PPStream)
dimm type───雾型
s Isamu Akasaki and his colleagues at Nagoya University created the first p-type gallium nitride by incorporating tiny amounts of magnesium.───年代后叶akasaki和他的同事们在名古屋大学通过添加少许镁制造出首例p型氮化镓。
He found that producing p-type gallium nitride, which made use of ammonia at high temperatures, trapped hydrogen atoms inside the crystal.───他发现在生成p型氮化镓的时候需要利用高温氨,以致于把氢原子引入了晶体之中。
rich in mitochondria, P type plastids, and some SEs had nacreous wall.───丰富的线粒体、P 型质体,有些筛分子有珠光壁。
In this case, as the P-type and N-type materials, any material generally preferably used for thermoelectric pairs can be used.───在这种情况下,作为P型和N型材料,可以使用通常优选地用于热电偶的任何材料。
The on-resistance is decreased as a result of increasing drift region doping which is due to the neutralism of the p-type buried layer.───p型埋层的电中性作用增加了漂移区优化的浓度而使比导通电阻降低。
In electronics, an interface between a P -type and N-type semiconductor material ; such an interface produces a diode effect.───在电子技术中,一种p型和N型半导体材料之间的界面,这种界面可以产生二极管效应。
In practical use, an N-type and a P-type are created side by side in the same semi-conductor Crystal, forming a P-N junction.───在p型和n型半导体材料之间渡越区中的一个面,在这里施主杂质和受主杂质的浓度相等。
However, transistors come in two varieties, n-type (negative) and p-type (positive).───不过,晶体管却有两种,一种是N型(负),一种是P型(正)。
and the intrinsic semiconductor is configured between the P-type semiconductor and the N-type semiconductor.───所述本征半导体配置于所述P型半导体与所述N型半导体之间。
Accordingly, the I-V characteristics of N and P type DBRs due to three kinds of current mechanisms:the drift-diffusion, pure drift and thermionic emission currents, have been analyzed theoretically.
Dietl et al. predicted that p type Mn doped ZnO could have ferromagnetism at room temperature.
Based on extension set, a concept of P type extension relationship equation constructed by extension matrix and the equation solution existence theorems are presented.
A novel high power microwave detector was described in this paper, which was developed based on hot carriers effect in P type semiconductors for measuring the power of high power microwave(HPM).
- open word
- metametricsolutions
- love is youre my destiny
- module strength
- incoming generator
- ixolith
- p u
- often raining
- negotiated payments
- liu ying han
- pennastroma
- incoming inspection
- piratesofthecaribbeanmp
- mastoid foramen
- label marker
- ixolyte
- negotiated price
- open work fully
- if you are fire
- metamon
- module statistics