p type信息详情

p type发音

意思翻译

p型

相似词语短语

type───vi.打字;vt.打字;测定(血等)类型;n.类型,品种;模范;样式;n.(Type)人名;(英)泰普

p p───abbr.过去分词(pastparticiple)

p for p───p对p

type in───打入,输入;在已打好的材料上加入; 输入(在网上)

script type───脚本类型

jesting type───玩笑式

Batt Type───电池类型

p p s───abbr.聚苯硫(polyphenylenesulfite);每秒脉冲数(pulsespersecond);(拉)再附言(postpostscriptum);一种网络在线电视软件(PPStream)

dimm type───雾型

双语使用场景

s Isamu Akasaki and his colleagues at Nagoya University created the first p-type gallium nitride by incorporating tiny amounts of magnesium.───年代后叶akasaki和他的同事们在名古屋大学通过添加少许镁制造出首例p型氮化镓。

He found that producing p-type gallium nitride, which made use of ammonia at high temperatures, trapped hydrogen atoms inside the crystal.───他发现在生成p型氮化镓的时候需要利用高温氨,以致于把氢原子引入了晶体之中。

rich in mitochondria, P type plastids, and some SEs had nacreous wall.───丰富的线粒体、P 型质体,有些筛分子有珠光壁。

In this case, as the P-type and N-type materials, any material generally preferably used for thermoelectric pairs can be used.───在这种情况下,作为P型和N型材料,可以使用通常优选地用于热电偶的任何材料。

The on-resistance is decreased as a result of increasing drift region doping which is due to the neutralism of the p-type buried layer.───p型埋层的电中性作用增加了漂移区优化的浓度而使比导通电阻降低。

In electronics, an interface between a P -type and N-type semiconductor material ; such an interface produces a diode effect.───在电子技术中,一种p型和N型半导体材料之间的界面,这种界面可以产生二极管效应。

In practical use, an N-type and a P-type are created side by side in the same semi-conductor Crystal, forming a P-N junction.───在p型和n型半导体材料之间渡越区中的一个面,在这里施主杂质和受主杂质的浓度相等。

However, transistors come in two varieties, n-type (negative) and p-type (positive).───不过,晶体管却有两种,一种是N型(负),一种是P型(正)。

and the intrinsic semiconductor is configured between the P-type semiconductor and the N-type semiconductor.───所述本征半导体配置于所述P型半导体与所述N型半导体之间。

英语使用场景

Accordingly, the I-V characteristics of N and P type DBRs due to three kinds of current mechanisms:the drift-diffusion, pure drift and thermionic emission currents, have been analyzed theoretically.

Dietl et al. predicted that p type Mn doped ZnO could have ferromagnetism at room temperature.

Based on extension set, a concept of P type extension relationship equation constructed by extension matrix and the equation solution existence theorems are presented.

A novel high power microwave detector was described in this paper, which was developed based on hot carriers effect in P type semiconductors for measuring the power of high power microwave(HPM).