silicide信息详情
n.[无化]硅化物
basiliscus wikipedia───维基百科
siliceous rocks───硅质岩类
silicate symbol───硅酸盐符号
deodorize silicone───硅酮除臭
silicates contains what───硅酸盐含有什么
silicate def───硅酸盐def
siliqua coin───西力克硬币
basilisk iga───蛇怪iga
fossiliferous limestone───石灰岩化石
basilisk lizard───蜥蜴
the MOSFETs, with higher doping, thicker si film and silicide, have lower parasitic bipolar gain.───提高体区掺杂浓度、增加硅膜和硅化物厚度能够减小增益。
Other silicide layers (50.4-50.6) are on the tops of the source, drain and polysilicon gate.───其它硅化物层(50.4 - 50.6)处于源极、漏极和多晶硅栅极的顶部。
The semiconductor junction diode comprises silicon, the silicon crystallized in contact with a silicide.───半导体结型二极管包括硅，所述硅与硅化物相接触时结晶化。
and a spacer on a side of the gate oxide layer pattern, the metal nitride layer pattern, and the silicide.───以及在该栅极氧化层图案、该金属氮化层图案和该硅化物的侧面上的间隔物。
The silicide may provide a template for crystallization, decreasing the defect density of the silicon and improving its conductivity.───硅化物可以提供用于结晶化的模板，降低了硅的缺陷密度并且提高了其导电性。
The invention discloses a preparation method of magnesium silicide and a device thereof.───本发明公开了一种硅化镁的制备方法与装置。
A suitable inoculant , such as calcium silicide or equivalent, is to be added to the metal stream as the furnace is tapped.───当熔炉运行的时候，可以在金属溶液里加一种合适的变质剂，例如钙化剂或者其他的等价物。
The invention is a preparation method of metal silicide film by microwave hydrogen plasma, relates to film preparation field.───一种微波氢等离子体制备金属硅化物薄膜的方法，用于薄膜制备领域。
We have a production line of organic chloride, silicide, nitride compounds and etc.
A suitable inoculant , such as calcium silicide or equivalent, is to be added to the metal stream as the furnace is tapped.
In the first section, the improvement of nickel silicide on the junction diode was demonstrated.
An advanced niobium - silicide based ultrahigh temperature alloy was prepared by vacuum consumable arc - melting method.
The Titanium silicide film has its potential advantage in forming a gate electrode and interconnection for VLSI because of its low resistivity and some other good characteristics.
The application of titanium silicide in integrated circuits was emphatically introduced.
In particular, when the refractory metal silicide film is a tungsten silicide film, the concentration of Cu is preferable that it is in the range of 0.1 to 1.0 wt. %.
The silicide coatings obtained in the fluidized - bed are similar to those prepared by other methods.
The silicide layer formed at interface was thought to induce the in plane magnetic anisotropy in the sandwiches, which consequently resulted in the high field sensitivity of GMR.