n type发音

意思翻译

n型

相似词语短语

type───vi.打字；vt.打字；测定（血等）类型；n.类型，品种；模范；样式；n.(Type)人名；(英)泰普

N n───abbr.neuralnetwork神经网络；NetworkNode网络结点

type in───打入，输入；在已打好的材料上加入; 输入（在网上）

script type───脚本类型

jesting type───玩笑式

Batt Type───电池类型

dimm type───雾型

wrong type───错误类型

aestivation type───夏眠型

双语使用场景

This accelerometer is fabricated by N type silicon wafer. To obtain high aspect ratio structure, deep reactive ion etching(DRIE) process is employed.───加速度计用普通的N型硅片制造，为了刻蚀高深宽比的结构，使用了深反应离子刻蚀（DRIE）工艺。

Gallium nitride turned out to be difficult to grow without defects, and although n-type gallium nitride could be made easily, p-type could not.───氮化镓最终被发现很难做到没有瑕疵，即使n型氮化镓很容易被造出，p型却不然。

Thermal electricity type is simple N type with large thermal electricity ratio absolute value.───方铅矿的热电导型单一，均为N（电子）型，并且具有较大的热电系数绝对值。

In this case, as the P-type and N-type materials, any material generally preferably used for thermoelectric pairs can be used.───在这种情况下，作为P型和N型材料，可以使用通常优选地用于热电偶的任何材料。

The main reason for the strength increase was the full - alignment of web - shells in N-type concrete masonry prisms.───分析表明，其强度提高的主要原因是N式砌块砌体实现了孔、肋对齐。

When a metal is brought into contact with an n-type semiconductor, electrons will flew from the semi-conductor to the metal.───使一块金属与n型半导体接触时，电子将从半导体流到金属。

In electronics, an interface between a P -type and N-type semiconductor material ; such an interface produces a diode effect.───在电子技术中，一种p型和N型半导体材料之间的界面，这种界面可以产生二极管效应。

In practical use, an N-type and a P-type are created side by side in the same semi-conductor Crystal, forming a P-N junction.───在p型和n型半导体材料之间渡越区中的一个面，在这里施主杂质和受主杂质的浓度相等。

These n-type dopant concentrations can be achieved using neutron transmutation doping (NTD) techniques.───这些n型搀杂浓度能使用中子嬗变搀杂（NTD）技术来取得。

英语使用场景

And draws a conclusion that doped N type monocrystal silicon is quite fit for micro EDM, while a non doped one isn't by a lot of EDM experiments.

As the P concentration increases to a suitable quantity, the photoconductivity of the alloy en-hances 2-3 orders of magnitude and the conduction mechanism changes from P to N type.

The active layer is made on high N type doping layer, and has a less area than ohmic contact layer.

N type showed high assertiveness, imaginativeness and sense of independence while S type showed a capacity to succeed in new environment.

This accelerometer is fabricated by N type silicon wafer. To obtain high aspect ratio structure, deep reactive ion etching(DRIE) process is employed.