impact ionization信息详情

impact ionization发音

意思翻译

[物]碰撞电离

相似词语短语

impact───vi.影响;撞击;冲突;压紧(on,upon,with);vt.挤入,压紧;撞击;对…产生影响;n.影响;效果;碰撞;冲击力

penning ionization───潘宁电离;彭宁电离

profound impact───深远影响

impact book───影响书

asteroid impact───小行星撞击

impact drill───冲击式钻机,冲击钻

economic impact───[经]经济影响

visual impact───视觉冲击,视觉震撼;视觉效果

impact wrestling───冲击式摔跤

双语使用场景

Based on photoemission effect. we design a laser photoemission electron gun for electron impact ionization source of time of flight mass spectrometer.───基于光电效应原理。我们设计了一个新型脉冲激光光电子枪,它可以作为飞行时间质谱的电子碰撞电离的电离源。

is unfavorable to study MS of aminoglycosides using electron impact ionization.───使用电子轰击离子化方法研究氨基糖甙类是不理想的。

Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).───碰撞电离通过一在一浮栅电荷存储晶体管(11)的衬底(20)中限定一虚拟二极管(30)的电荷注入器(25)而产生。

A non-volatile memory cell operating at low voltage by means of impact ionization for programming.───一种可于低压工作的非易失性存储单元,其通过碰撞电离进行编程。

The severe impact ionization effects in polycrystalline silicon thin-film transistors are investigated and characterized.───为了研究与分析复晶矽薄膜电晶体下严重的碰撞游离效应所造成的元件特性。

In this thesis, we analyse the impact-ionization mechanism and build up 1D and 2D impact-ionization circuit model.───本论文主要以分析撞击游离(impact-ionization)的机制并建立一维及二维的撞击游离等效电路模型。

Collisional ionization rate coefficients of electron impact ionization in a highly ionized Au plasma───激光金等离子体的电子离子碰撞电离速率系数

A Fully Relativistic Distorted-wave Calculation for Electron-impact Ionization Cross Section───电子碰撞电离截面的全相对论扭曲波计算

Low-energy triple-differential cross sections for electron impact ionization of hydrogen───低能电子离化氢原子的三重微分截面

英语使用场景

Based on photoemission effect. we design a laser photoemission electron gun for electron impact ionization source of time of flight mass spectrometer.

Gate current for pMOSFETs is composed of direct tunneling current, channel hot hole, electron injection current, and highly energetic hot holes by secondary impact ionization.

A high reverse bias voltage creates a strong internal electric field, which accelerates the electrons through the silicon crystal lattice and produces secondary electrons by impact ionization.

Hot carriers refer to the carriers that have gained high kinetic energy after being accelerated by a strong electric field in areas of high field or by impact ionization.