ingaas信息详情
ingaas公司
cove molding───油画外框的一种（边呈凹圆状）
cannonading of the french fleet───法国舰队的炮声
cross training───交叉培训; 交叉锻炼；交叉训练
stratified random sampling───分层任意抽样，分层随机抽样，分层随机取土样
including thesaurus───包括同义词库
GA LINGA───林加
acquiring a business───收购企业
starlings images───椋鸟图片
navigating the unknown───探索未知世界
chattering up───喋喋不休
Quad PD Arrays consist of four photodiodes monolithically integrated on a common indium phosphide (InP) substrate, and are fabricated using a low FIT rate InGaAs/InP semiconductor process.───方形光二极管阵列包括四个集成在通用磷化铟（InP）衬底上的光二极管单片集成电路，采用低制造、集成与测试率的铟镓砷化物/磷化铟半导体工艺制造。
High polarization properties of single-photon emission from anisotropic InGaAs quantum dots───各向异性量子点单光子发射的高偏振度特性
Optimization of InGaAs Quantum Dots for Optoelectronic Applications───自组织量子点的优化生长
Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array───单片集成InGaAs有源象素成象阵列的特性
The Quad PD Arrays consist of four photodiodes monolithically integrated on a common indium phosphide (InP) substrate, and are fabricated using a low FIT rate InGaAs/InP semiconductor process.
Discovery Semiconductors Inc. in Ewing. N.J., is introducing four-element quad indium gallium arsenide (InGaAs) photodiode arrays for 40- and 100-gigabit-per-second optical communications.
We fabricated tilted buried stripe semiconductor optical amplifier by tensile strained InGaAs bulk active region.