heterostructure发音

意思翻译

n.[电子]异质结构

相似词语短语

Heterosomata───n.异体目；鲽形目

heterostylism───n.异长花柱现象；异形花柱性

heterosis───n.[遗]杂种优势

heterosporic───adj.异形孢子的

heterosporous───具异形孢子的

heterostyled───异性恋

双语使用场景

Heterostructure is the most essential and important structure of semiconductor lasers.───异质结构是半导体激光器最基本也是最重要的结构。

valley mixing in band mixing quantum well and the heterostructure intervalley transferred electron effect are described in this paper.───介绍了能带混合量子阱中的多能谷混合和异质谷间转移电子效应。

The resonant tunneling diode (RTD) is one of the most promising band-gap engineered heterostructure devices due to its negative differential resistance.───共振隧穿二极管因其特有的负微分电阻特性，成为一种很有前途的基于能带工程的异质结构量子器件。

A new model of two dimensional surface states produced by a strong polarized charge on a nitride heterostructure surface is presented.───提出了氮化物表面强极化电荷产生薄吸附层形成的二维表面态新模型。

The heterostructure intervalley transferred electron effect and its devices have been thoroughly analyzed through this work.───从而深化了对异质谷间转移电子器件及其工作机理的研究。

Laser Diodes (contd. ) : In-plane lasers: double heterostructure, quantum well, multi-contact, surface emitting.───平面镭射：双异质结构，量子井，多重电极，面发射。

Development of such distributed feedback heterostructure lasers requires crystal growth on corrugated layers.───研制这种分布反馈双异质结构激光器要求在皱折层上生长出单晶层。

Diagram of front view of a double heterostructure laser diode (not to scale).───一个双异质结激光器的前视图（非等比例）。

Semiconductor heterostructure and its application on electronics and optoelectronics: profile of the 2000 Nobel Prize in physics───半导体异质结及其在电子和光电子中的应用——2000年诺贝尔物理奖评述

英语使用场景

Double heterostructure(DH)realizes the complete confinement of carriers and light, decreasing threshold current density substantially.

From this new physical principle, we have developed a new heterostructure intervalley transferred electron device (HITED).

Development of such distributed feedback heterostructure lasers requires crystal growth on corrugated layers.

A second embodiment of the inventive method for forming a semiconductor heterostructure comprises steps S1 to S3 and S5 of the first embodiment.

The polaron ground state in asymmetric double heterostructure (ADHS) is studied.

Separate confinement heterostructure strained single quantum well materials were grown by the technology of metal organic chemical vapor deposition(MOCVD).

The energy band tailoring in AlGaN/GaN heterostructure by using polarization charge is investigated according to the self consistent solution of Schr dinger equation and Poisson equation.

The main factors affecting the quality of semiconductor heterostructure epitaxy chips, inspection methods and some typical test results have beeen introduced in this pater.

The introduce of band-gap discontinuity in heterostructure can obtain high injection ratio, decrease further threshold current and increase the output power.