device structure信息详情

device structure发音

意思翻译

设备结构

器件结构

相似词语短语

device───n.装置;策略;图案;设备;终端

structure───vt.组织;构成;建造;n.结构;构造;建筑物

device control───[计]设备控制;设备控制符,装置控制

tech device───技术设备

leveling device───水平调节装置;液面控制装置;水平调整装置

device status───[计]设备状态

safety device───[安全]安全装置;保护装置;[安全]保险装置;[安全]安全防护装置;过载安全装置

eikon device───eikon设备

actuator device───执行机构装置

双语使用场景

Card buckle type water distribution device structure.───卡扣式布水器结构,布水均匀。

In this dissertation, main study is on device structure, performance and luminescence mechanism etc.───本文主要侧重于研究器件结构、特性及发光机理等方面。

Some new design considerations on device structure are proposed.───提出了在器件结构上的一些新设想。

Through the analysis of this waveguide mode, single-mode ridge waveguide was designed and a new device structure was proposed.───通过对这种波导模式的分析,进行了单模脊波导的设计,提出了一种新器件结构。

Each sk_buff identifies the device structure (net_device) to which the packet is being sent or from which the packet was received.───每个sk_buff都在设备结构(net_device)中标识报文发送的目的地,或者接收报文的来源地。

At initialization time, a device driver allocates a net_device structure and then initializes it with its necessary routines.───在进行初始化时,设备驱动程序会分配一个net_device结构,然后使用必须的程序对其进行初始化。

The results of the qualitative change depends on just the starting point of oscillating and inking device structure.───这些改变定性的结果仅仅取决于串墨起始角度以及供墨装置的结构。

A light emissive device structure and a method for forming a light emissive device structure are provided.───提供一种光线发射器件结构和一种用来形成光线发射器件结构的方法。

A novel self-bias high-voltage device structure for the start-up circuit of an off-line switching model power supply IC is described.───设计了一种新的用于离线式集成开关电源启动电路的自偏置高压器件结构。

英语使用场景

Basic principles of device modeling and simulation were introduced and by using process simulating software basic device structure were implemented, device characteristics were analyzed in succession.

The device structure is simple, small footprint, easy to use and reliable.

A novel self-bias high-voltage device structure for the start-up circuit of an off-line switching model power supply IC is described.

In addition, we designed the new device structure, the new layout and the new flow of the Static Induction Transistor (SIT).

A novel - bias - voltage device structure for the - up circuit of an - line switching model power supply IC is described.

The effects of DBR reflectivity and well numbers on threshold current and output power of bottom-emitting VCSELs were analyzed to design an optimal device structure.

With the aid of this type of device structure improvements, Graphene FET are higher switches.

The mechanical driving is composed of three major parts of a winding up structure, an energy storing device structure and a braking on-off control structure.

Through the analysis of this waveguide mode, single-mode ridge waveguide was designed and a new device structure was proposed.