gate electrode信息详情
[电子]栅电极
electrode───n.[电]电极；电焊条
gate───vt.给…装大门；n.(Gate)人名；(英)盖特；(法、瑞典)加特；n.大门；出入口；门道
electrode pokemon───电极口袋妖怪
electrode pokedex───电极pokedex
electrode copper───电极铜
porous electrode───多孔电极，多孔性电极
graphite electrode───[电]石墨电极
electrode stats───电极状态
electrode tool───电极工具
region and a drain region are formed in the fin at the opposite sides of the gate electrode.───源区和漏区形成在鳍部内栅极的相对侧处。
protection circuit on the input end has a gate electrode comprised of a band-like conductive film.───输入端的保护电路有由带状导电膜组成的栅电极。
gate electrode is formed on the gate insulating film and has a sidewall.───栅极电极在栅极绝缘膜上形成，并具有侧壁。
A first conductive impurity ion is implanted into a semiconductor substrate to form a well area on which a gate electrode is formed.───向半导体衬底中注入第一导电杂质离子，由此形成阱区，其上再形成栅极。
Most of the radiation is not energetic enough to penetrate the gate electrode, so damage is confined to the periphery of that electrode.───大多数辐射没有足够的能量来穿透栅电极，因此，损伤被限制在电极的周围。
The one gate insulating layer may be interposed between the common gate electrode and the one pair of fins of the semiconductor substrate.───栅极绝缘层置于所述公共栅极电极和所述半导体衬底的所述鳍对之间。
So the name of a process became identified with the width of the gate electrode.───所以，制程的名字就用来标识闸电极的宽度。
A gate electrode is disposed in the gate trench over but insulated from the at least one conductive shield electrode.───置于所述至少一个导电保护电极之上但是与所述导电保护电极隔离开的栅极；
A source region and a drain region are formed in the fin at the opposite sides of the gate electrode.───源区和漏区形成在鳍部内栅极的相对侧处。
A gate electrode is disposed in the gate trench over but insulated from the at least one conductive shield electrode.
A gate electrode strip is over the first and the second active regions and forms a first MOS device and a second MOS device with the first active region and the second active region, respectively.
The Titanium silicide film has its potential advantage in forming a gate electrode and interconnection for VLSI because of its low resistivity and some other good characteristics.
The common gate electrode may enclose a portion of one fin of the one pair of fins of the semiconductor substrate, and may be insulated from the semiconductor substrate.
The gate electrode is formed on the gate insulating film and has a sidewall .
A gate dielectric layer and a gate electrode are formed on the top surface, the opposing sidewalls of the fin and on the bottom and on the opposing sidewalls of the recess in the fin.
A gate electrode may surround at least a portion of the fin of the semiconductor substrate. The gate electrode may be insulated from the semiconductor substrate.http://Sentencedict.com
By the side wall type gate electrode flash memory unit structure with the shared word line, the invention realizes the two-position storage, thereby improving the storage density.
Using the high-quality mica plate as substrate materials, a new gate electrode structure was fabricated successfully with silver slurry and simple screen-printing process.