floating gate信息详情

floating gate发音

意思翻译

浮置闸门,浮置栅极

相似词语短语

floating───v.漂浮(float的现在分词);adj.流动的;漂浮的,浮动的

gate───vt.给…装大门;n.(Gate)人名;(英)盖特;(法、瑞典)加特;n.大门;出入口;门道

floating shelves───浮动货架

floating restaurants───浮动餐厅

floating point───浮点,浮点法,浮点小数点;[计]浮点

floating text───浮动文本

floating life───漂浮生命

floating koala───漂浮的考拉

gate chalk───门粉笔

双语使用场景

According to the structural feature of the floating gate, a nonlinear single - degree of harmonic oscillating model is set up.───根据浮体闸门的构造特征,建立了单自由度非线性振荡模型。

The floating gate can only be accessed though another transistor, the control gate.───浮动门虽然只能进入另一个晶体管,控制闸门。

The floating gate is positioned between the source and drain regions.───浮动栅极定位于源极区与漏极区之间。

The DRAM further has a floating gate insulated from the surface and is positioned between the first region and the second region.───所述DRAM进一步包括与所述表面绝缘的浮栅,且位于所述第一区域和所述第二区域之间。

Each bit of data in a flash memory device is stored in a transistor called a floating gate.───每一个比特的数据储存在快闪记忆装置称为浮栅晶体管。

A second impurity diffusion layer, which occupies a space within the semiconductor substrate, overlaps with the floating gate.───第二杂质扩散层设置在半导体基板内,并与浮栅重叠。

The process the control gate uses to access the floating gate is a field emission phenomenon known as Fowler-Nordheim tunneling.───利用过程控制闸门进入浮栅是场发射现象称为Fowler-Nordheim隧。

The invention also discloses a fabricating method for the nanocrystal floating gate memory with the multi-media composite tunneling layer.───本发明同时公开了一种多介质复合遂穿层的纳米晶浮栅存储器的制作方法。

英语使用场景

At first, the thesis has studied floating gate performance of a kind of new flash structure which combines split gate structure and stack gate structure.

Electrons are injected into the floating gate by applying a high voltage to the second impurity diffusion layer in capacitive coupling with the floating gate.

A memory cell structure for a memory device is provided, the memory cell structure comprising a read transistor having a floating gate node, a tunnelling capacitor, and a coupling capacitor stack.

Based on the PMOS Quasi - floating gate transistors, a fully differential operational amplifier is proposed.