electron beam lithography发音

意思翻译

[电子]电子束曝光；[电子]电子束蚀刻

相似词语短语

electron beam───[物]电子束

lithography───n.[印刷]平版印刷术，石印术

electron───n.电子

beam───n.横梁；光线；电波；船宽；[计量]秤杆；vt.发送；以梁支撑；用…照射；流露；n.(Beam)人名；(阿拉伯)贝亚姆；(英)比姆；vi.照射；堆满笑容

lithography cis───光刻cis

lithography solutions───光刻解决方案

outermost electron───最外层电子

lithography cof───平版印刷

electron shell───[物]电子壳层；[物]电子壳；[物]电子层

双语使用场景

electron beam lithography and its improvement are introduced also.───同时还介绍了电子束光刻技术及其改进。

Fourier transform, produces a fast and accurate calculation for dose precompensation in proximity effect correction for electron beam lithography.───将付里叶变换法运用于电子束曝光的邻近效应校正中，形成了快速、准确的剂量校正法。

Electron beam lithography machine is the key instrument for mask making and research of nanometer device.───电子束曝光技术是掩模版制作和纳米器件研究的主要手段。

Electron beam lithography technique has developed in recent thirty years. It has been used in many fields such as micro fabrication.───电子束曝光技术是近三十年来发展起来的一门新兴技术，目前广泛应用于微细加工等各种领域。

A conic primitive based intermediate pattern and its data format of electron beam lithography are defined.───在一种新的电子束曝光机二次曲线单元图的基础上定义了一种中间图形数据格式。

Inductors were defined by electron-beam lithography and formed by depositing micron-thick aluminium metal onto the wafers.───用电子束刻蚀法在晶片上镀上纳米级铝层形成了电感器。

Approaching higher resolution is the critical issue for electron-beam lithography.───追求更高的分辨率是电子束曝光研究的核心内容。

This paper introduced the develop level of electron beam lithography in the world and the techniques used in pattern generators.───论文首先简要介绍了国内外电子束曝光技术的发展水平和图形发生器的工作原理。

There are two major topics in my research. One is the research of electron-beam lithography proximity effect correction.───在本篇论文有两个主题，一个是电子术微影邻近效应的修正，另一个抗反射层的制备。

英语使用场景

The residual surface potential may introduce errors in following observations, affect measurement accuracy in critical dimension SEM and cause pattern placement errors in electron beam lithography.

This paper introduces the development of electron beam lithography around the world and basic fundamentals of pattern generator.

A novel process combining the self-assembly technique with electron beam lithography and selective chemical deposition was proposed for patterned film preparation.

The deflection system of an electron beam lithography tool is used to control deflection scanning of electron beam.

The device is fabricated in Gallium Arsenide using electron beam lithography to define special side-gated channels.