sram信息详情
abbr.近程攻击飞弹（short-rangeattackmissile）；静态随机存储器（StaticRandomAccessMemory）
greater demons osrs───大恶魔OSR
aper srl───aper公司
superiors osrs───上级OSR
disrobe scene───脱衣现场
disruption to───对……的中断
findable items osrs───可查找项目OSR
cl ssr───氯二硫醚
disroot reddit───迪斯罗特·雷迪特
goblin diplomacy osrs───地精外交
disrupted meaning───断章取义
It can achieve substantial performance improvement while also freeing up SRAM.───在去除SRAM的同时，它还获得了真正性能上的提升。
SRAM is a common type of digital memory chip used in a wide variety of electronic systems for data storage.───SRAM是数字存储器片的通用类型，用在广泛的电子系统进行数据存储。
These chips were SRAM memory chips often used to get new manufacturing processes debugged.───这些芯片SRAM存储器通常用来获取新的芯片制造工艺调试。
SDRAM should not be confused with SRAM, or static RAM, which is extremely fast and expensive memory used for processor cache memory .───（请不要把SDRAM与SRAM（静态RAM）相混淆，SRAM是速度极快且非常贵的存储器，用于处理器的缓冲存储器。）
Traditionally, an SRAM chip is made more dense by shrinking its basic building block, often referred to as a cell.───从传统上而言，SRAM芯片通过缩小基本构建单元，来制造得更加紧密。
Traditionally, We used a CPU with a SRAM and an EEPROM to implement the control module on a wireless transmitting equipment.───无线传输设备控制模块传统的实现方法是采用一块处理器，附加SRAM、EEPROM等电路来实现。
Sometimes, the contents of a ROM chip are copied to SRAM or DRAM to allow for shorter access times (as ROM may be slower).───有时，内容的光碟片复制到SRAM或DRAM芯片，以便缩短存取时间（如ROM可能会比较慢）。
The SRAM memory means comprises a first pass-gate FET (T6) which is coupled between a first node (A) and a bit line-bar (BLB).───SRAM存储器装置包括耦合在第一节点（A）和位线条（BLB）之间的第一门FET（T6）。
Presents a circuit of FIFO involving single port SRAM.
SRAM FPGA system soft simulation designed to realize bitwise write bitwise Reading.
The SRAM cell illustrated Kuhn's point as she showed the evolution from 90 - nm to 45 - nm design.
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It consists of a digital controller, SRAM for display data memory, a DC-DC voltage converter, reference current generators, a pre-charge voltage generator, 64 common drivers, and 132 segment drivers.
The access time of SRAM is 15 ns by optimizing the system.
In one embodiment, the semiconductor device includes a static random access memory (SRAM) cell having numerous NFETs (110) and PFETs (112).
A 32KB Static Random Access Memory (SRAM), which is widely used at present in VLSI, is designed in this paper.
As a class of most important cache for the embedded IP application, Static Random Access Memory (SRAM) has become one of the hottest research topics in the digital integrated circuits field.