photodetector信息详情
n.[电子]光电探测器
anode photodiode───阳极光电二极管
chrysalides photodreams by mauro bertoncelli───毛罗·伯顿切利的蛹类光流
InVisage's approach is to build the photodetector out of quantum dots on the surface of a chip, above the circuitry.───InVisage的方法是将表面涂有量子点的芯片传感器置于电路之上。
The photodetector then produces a signal defining how the light falling on it changes over time.───随后光电探测器将产生一个信号，定义落在它上面的光量如何随时间变化。
The avalanche photodetector demonstrated by IBM is the world's fastest device of its kind.───IBM展示的雪崩光电探测器是世界上同类设备中最快速的设备。
InVisage's approach is to build the photodetector out of quantum dots on the surface of a chip, above the circuitry.───InVisage的方法是在芯片的表面、电子线路的上面再放一个量子点光电探测器。
A typical photodetector is made of a silicon chip a few millimetres across onto which light is focused by a small lens.───经典的光电探测器是使用透镜将光线聚焦在一个几毫米外的硅片上。
The system comprises a first light source, a second light source and a photodetector.───所述系统包括第一光源、第二光源和光电检测器。
The LIV test involves ramping current through the VCSEL and measuring the resulting light output with a photodetector (PD).───LIV测试需要有斜波电流通过VCSEL，并利用光电探测器（PD）测量产生的光输出。
A simple circuit generates an autofocus signal based upon the output of the photodetector .───这样就可以使用一个简单的电路按光电探测器上的输出进行自动聚焦。
A photodetector detects an optical signal, and a current from the photodetector is applied an amplifier.───光电检测器检测光信号，对来自光电检测器的电流应用放大器。
An integrated photodetector system is designed and manufactured, in which the photodetector array and the read-out circuits are integrated on the same silicon chip.
The photodetector then produces a signal defining how the light falling on it changes over time.
Finished photodetector: place finished product on the conveyor belt to prevent collision.
In another example, a light source and photodetector allow the hardware to determine a user's blood oxygen content.
At the receiving end, a photodetector converts them back to electrical signals.
The avalanche photodetector demonstrated by IBM is the world's fastest device of its kind.
Based on the models of the four-quadrant photodetector, general methods for physical models are also summarized.
Double-layer transparent films, silicon nitride and silicon dioxide can be used as antireflection coating on silicon PIN photodetector.
CMOS-process-compatible silicon double photodetector is designed. And the theoretical absolute spectral response of this photodetector is calculated and analyzed.